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| Advance Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM (Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFR 100N25 VDSS ID25 RDS(on) = 250 V = 87 A = 27 m trr 250 ns Symbol VDSS VDGR VGS VGSM ID25 IL(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC TC TC TC = 25C (MOSFET chip capability) = External lead current limit = 25C, Note 1 = 25C Maximum Ratings 250 250 20 30 87 75 400 100 64 3 5 400 -55 ... +150 150 -55 ... +150 V V V V A A A A mJ J V/ns W C C C C V~ g ISOPLUS 247TM E153432 Isolated backside* G = Gate S = Source D = Drain TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS TJ 150C, RG = 2 TC = 25C * Patent pending 1.6 mm (0.063 in.) from case for 10 s 50/60 Hz, RMS t = 1 min 300 2500 5 Features l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Low drain to tab capacitance(<30pF) l l l Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Rated for Unclamped Inductive Load Switching (UIS) l Fast intrinsic Rectifier Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 250 2.0 V 4V 200 nA TJ = 25C TJ = 125C 100 A 2 mA 27 m Applications l DC-DC converters l l l l Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3mA VDS = VGS, ID = 8mA VGS = 20 V, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = IT Notes 2, 3 Advantages l Easy assembly l l Space savings High power density (c) 2001 IXYS All rights reserved 98840 (5/01) IXFR 100N25 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. Notes 2, 3 40 70 9100 VGS = 0 V, VDS = 25 V, f = 1 MHz 1800 600 42 VGS = 10 V, VDS = 0.5 VDSS, ID = IT RG = 1 (External), Notes 2, 3 55 110 40 300 VGS = 10 V, VDS = 0.5 VDSS, ID = IT Notes 2, 3 57 160 0.3 0.15 S pF pF pF ns ns ns ns nC nC nC K/W K/W ISOPLUS 247 OUTLINE gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK V DS = 10 V; ID = IT Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions V GS = 0 V Repetitive; Note 1 IF = IT, VGS = 0 V, Notes 2, 3 Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 100 400 1.5 250 A A V ns C A IF = 50A,-di/dt = 100 A/s, VR = 100 V 1.4 10 Note: 1. Pulse width limited by TJM 2. Pulse test, t 300 s, duty cycle d 2 % 3. IT = 50 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 |
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